PART |
Description |
Maker |
TIM5964-4UL09 |
HIGH POWER P1dB=36.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
TIM5964-25UL TIM5964-25UL09 |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
TIM7785-4UL09 |
HIGH POWER P1dB=36.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
TIM6472-8UL09 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc. Anadigics Inc
|
AWT6106 AWT6106M5P8 |
PCS/CDMA 3.5V/28.5dBm Linear Power Amplifier Module From old datasheet system Power Amplifiers
|
ANADIGICS, Inc
|
AWT6388 AWT6388RM20P9 |
450 MHz - 460 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 450 MHz CDMA 3.4V/29.5dBm Linear Power Amplifier Module
|
ANADIGICS INC ANADIGICS, Inc
|
RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag 80m惟, 1.5A/0.6A High-Side Power Switches with Flag 80m楼?, 1.5A/0.6A High-Side Power Switches with Flag 80mヘ, 1.5A/0.6A High-Side Power Switches with Flag User Programmable Micro-Power Voltage Detectors
|
Richtek Technology Corporation
|
BUX11A |
HIGH CURRENT HIGH POWER HIGH SPEED SILICON N-P-N POWER TRANSISTOR
|
General Electric Solid State GESS[GE Solid State] ETC
|